@inproceedings{6524af505b9e43a186fc77f2f1e5140a,
title = "Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT",
abstract = "Two critical processes within the gate module of GaN-based MOS-HEMT with significant impact on device robustness and performance were identified and are presented in this paper. Specifically, data highlighting the impact of the number of cycles of the atomic layer etching of the AlGaN barrier to recess the gate region and the sequence of the gate dielectric anneal step on device performance are discussed. The optimization of these two critical steps enabled the implementation of a 50A/600V with an off-state leakage current of 455 μA at 600V and on-state resistance of 41mΩ at VGS=2.5V.",
author = "Khalil, {S. G.} and R. Chu and R. Li and D. Wong and S. Newell and X. Chen and M. Chen and D. Zehnder and S. Kim and A. Corrion and B. Hughes and K. Boutros and C. Namuduri",
year = "2012",
doi = "10.1109/ESSDERC.2012.6343395",
language = "English (US)",
isbn = "9781467317078",
series = "European Solid-State Device Research Conference",
pages = "310--313",
booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",
note = "42nd European Solid-State Device Research Conference, ESSDERC 2012 ; Conference date: 17-09-2012 Through 21-09-2012",
}