Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT

S. G. Khalil, R. Chu, R. Li, D. Wong, S. Newell, X. Chen, M. Chen, D. Zehnder, S. Kim, A. Corrion, B. Hughes, K. Boutros, C. Namuduri

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

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Engineering & Materials Science