Critical thickness of crystallization and discontinuous change in ferroelectric behavior with thickness in ferroelectric polymer thin films

Q. M. Zhang, Haisheng Xu, Fei Fang, Z. Y. Cheng, Feng Xia, H. You

Research output: Contribution to journalArticlepeer-review

148 Scopus citations

Abstract

We report on the observation of the critical thickness of crystallization of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer thin films, which were solution spun cast on platinum coated silicon wafer. The effect occurs at about 100 nm thickness, which is significantly above any currently known spatial dimensions of the polymer, so that for films at thickness below about 100 nm, the crystallization process is strongly hindered, resulting in a low crystallinity in these films. This low crystallinity leads to a large and discontinuous change of the dielectric constant and ferroelectric polarization in the films below the critical thickness.

Original languageEnglish (US)
Pages (from-to)2613-2616
Number of pages4
JournalJournal of Applied Physics
Volume89
Issue number5
DOIs
StatePublished - Mar 1 2001

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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