Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts

A. W. Kleinsasser, T. N. Jackson, D. McInturff, F. Rammo, G. D. Pettit, J. M. Woodall

Research output: Contribution to journalArticlepeer-review

62 Scopus citations


We describe current-voltage measurements on superconducting Nb/InGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover in a thin-film structure, and are of interest for investigations of hybrid superconductor-semiconductor devices, proximity effect boundary conditions, and transport in ohmic contacts to semiconductors.

Original languageEnglish (US)
Pages (from-to)1811-1813
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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