Crosstalk reduction in TSV arrays with direct ohmic contact between metal and silicon-substrate

D. C. Yang, E. P. Li, Li Jun, X. C. Wei, J. Y. Xie, M. Swaminathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In response to the requirement of novel crosstalk-reduction scheme for high density through silicon via(TSV) interconnects in silicon interposer, this paper presents a structure and performance analysis of through-silicon via(TSV) with direct ohmic contact between a ground TSV and silicon substrate for coupling mitigation purposes. We further expand the structure to a 3×3 TSV array and investigate its cross-talk performance. The simulation results show that the signaling scheme, which uses direct ohmic contact for ground TSVs, can effectively reduce the crosstalk and coupling noise between signal TSVs than the conventional design.

Original languageEnglish (US)
Title of host publicationEMC 2014/Tokyo - 2014 International Symposium on Electromagnetic CompatibiIity, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages374-377
Number of pages4
ISBN (Electronic)9784885522871
StatePublished - Dec 23 2014
Event2014 International Symposium on Electromagnetic CompatibiIity, EMC 2014 - Tokyo, Japan
Duration: May 12 2014May 16 2014

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
Volume2014-December
ISSN (Print)1077-4076
ISSN (Electronic)2158-1118

Conference

Conference2014 International Symposium on Electromagnetic CompatibiIity, EMC 2014
Country/TerritoryJapan
CityTokyo
Period5/12/145/16/14

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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