CrPt Ohmic contacts to B 12 As 2

S. H. Wang; E. M. Lysczek; Bangzhi Liu; S. E. Mohney; Z. Xu; R. Nagarajan; J. H. Edgar

doi:10.1063/1.2001760

CrPt Ohmic contacts to B ₁₂ As ₂

S. H. Wang, E. M. Lysczek, Bangzhi Liu, S. E. Mohney, Z. Xu, R. Nagarajan, J. H. Edgar

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.

Original language	English (US)
Article number	042103
Journal	Applied Physics Letters
Volume	87
Issue number	4
DOIs	https://doi.org/10.1063/1.2001760
State	Published - Jul 25 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "CrPt Ohmic contacts to B 12 As 2 ",

abstract = "Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.",

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T1 - CrPt Ohmic contacts to B 12 As 2

AU - Wang, S. H.

AU - Lysczek, E. M.

AU - Liu, Bangzhi

AU - Mohney, S. E.

AU - Xu, Z.

AU - Nagarajan, R.

AU - Edgar, J. H.

PY - 2005/7/25

Y1 - 2005/7/25

N2 - Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.

AB - Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042103

ER -

CrPt Ohmic contacts to B ₁₂ As ₂

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