Cryogenic Memory Array based on Ferroelectric SQUID and Heater Cryotron

Shamiul Alam, Md Mazharul Islam, Md Shafayat Hossain, Kai Ni, Vijaykrishnan Narayanan, Ahmedullah Aziz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Cryogenic (cryo) memory devices, designed to operate at/below 4 Kelvin (K) temperature, is a prime enabler of practical quantum computing systems, and superconducting (SC) electronic platforms (Figs. 1(a), (b)) [1]. The state-of-the-art quantum algorithms require many arbitrary rotations which demand a large memory to store program instructions [2]. SC qubits (used in most of the existing quantum computing systems) are highly sensitive to noise and hence, to protect the qubit states from thermal disturbances, they are placed at a few milli-Kelvin (mK) temperature. Furthermore, to preserve the integrity of the quantum states, the SC qubits undergo continuous error correction schemes, requiring extensive memory and bandwidth [2]. Superconducting electronics (SCE) (targeted towards space applications, and high-performance computing) outperforms the conventional CMOS counterparts in terms of speed and energy-efficiency (Fig. 1(c)) [3]. Decades of research efforts have given rise to three major categories (and several sub-variants) of cryo-memories based on SC, non-SC, and hybrid technologies (Fig. 2) [2], [4]-[6]. However, the existing variants suffer from one or more of the following challenges - (i) limited scalability, (ii) process complexity, (iii) bulky peripherals, (iv) array-level interference, (v) volatility, and (vi) speed incompatibility. Therefore, a scalable cryo-memory system remains elusive. To address these existing issues, here, we present a novel cryo-memory system utilizing -(i) the polarization-induced Cooper-pair [7] modulation in a ferroelectric (FE) superconducting quantum interference device (SQUID) (Fig. 3(a)) [8], and (ii) current controlled SC non-SC switching in a heater cryotron (hTron) (Fig. 4) [4]. Discrete prototypes of these devices have been demonstrated recently, but their coupled interactions (which we harness in our work) were never explored before.

Original languageEnglish (US)
Title of host publication2022 Device Research Conference, DRC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665498838
DOIs
StatePublished - 2022
Event2022 Device Research Conference, DRC 2022 - Columbus, United States
Duration: Jun 26 2022Jun 29 2022

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2022-June
ISSN (Print)1548-3770

Conference

Conference2022 Device Research Conference, DRC 2022
Country/TerritoryUnited States
CityColumbus
Period6/26/226/29/22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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