Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate

David A. Scrymgeour; Venkatraman Gopalan; Tony E. Haynes

doi:10.1080/10584580108012805

Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate

David A. Scrymgeour, Venkatraman Gopalan, Tony E. Haynes

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report the successful fabrication of 6 um thick slices from a ferroelectric domain micro-engineered LiNb03 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbOb, followed by ion-implanting with high energy He+ ions to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact.

Original language	English (US)
Pages (from-to)	35-42
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	41
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580108012805
State	Published - 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584580108012805

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title = "Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate",

abstract = "We report the successful fabrication of 6 um thick slices from a ferroelectric domain micro-engineered LiNb03 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbOb, followed by ion-implanting with high energy He+ ions to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact.",

author = "Scrymgeour, {David A.} and Venkatraman Gopalan and Haynes, {Tony E.}",

note = "Funding Information: Acknowledgements This work was partially supported by the funds made available to Dr. V. Gopalan through the National Science Foundation and the DARPA-STAB program. Modification and Characterization Research Center of Oak Ridge National Laboratory was sponsored by the U.S. Department of Energy, Office of Science under contract DE-AC05-000R22725 with UT-Battelle, LLC.",

year = "2001",

doi = "10.1080/10584580108012805",

language = "English (US)",

volume = "41",

pages = "35--42",

journal = "Integrated Ferroelectrics",

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T1 - Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate

AU - Scrymgeour, David A.

AU - Gopalan, Venkatraman

AU - Haynes, Tony E.

N1 - Funding Information: Acknowledgements This work was partially supported by the funds made available to Dr. V. Gopalan through the National Science Foundation and the DARPA-STAB program. Modification and Characterization Research Center of Oak Ridge National Laboratory was sponsored by the U.S. Department of Energy, Office of Science under contract DE-AC05-000R22725 with UT-Battelle, LLC.

PY - 2001

Y1 - 2001

N2 - We report the successful fabrication of 6 um thick slices from a ferroelectric domain micro-engineered LiNb03 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbOb, followed by ion-implanting with high energy He+ ions to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact.

AB - We report the successful fabrication of 6 um thick slices from a ferroelectric domain micro-engineered LiNb03 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbOb, followed by ion-implanting with high energy He+ ions to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact.

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Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate

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