Crystal-structure dependent domain-switching behavior in BaTiO3 ceramic

Natthapong Wongdamnern; Kanokwan Kanchiang; Athipong Ngamjarurojana; Supon Ananta; Yongyut Laosiritaworn; Anek Charoenphakdee; Shashaank Gupta; Shashank Priya; Rattikorn Yimnirun

doi:10.1088/0964-1726/23/8/085022

Crystal-structure dependent domain-switching behavior in BaTiO₃ ceramic

Natthapong Wongdamnern, Kanokwan Kanchiang, Athipong Ngamjarurojana, Supon Ananta, Yongyut Laosiritaworn, Anek Charoenphakdee, Shashaank Gupta, Shashank Priya, Rattikorn Yimnirun

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Crystal-structure dependent dynamic scaling behavior was investigated for BaTiO₃ ceramic. The scaling relation of the form 〈A〉 ∝ f^M Eⁿ₀, (where 〈A〉 is the area under the hysteresis loop, while f and E₀ represent the frequency and amplitude of the applied electric field signal) was used to determine the values of parameters m and n at various temperatures in the range of -90 °C to 170 °C. The variations in the values of parameters m and n with temperature are explained in terms of the effect of the crystallographic nature of BaTiO ₃. The values of parameters m and n obtained for the paraelectric regime suggest that the hysteresis in the P-E (polarization-electric field) loops is related to the dielectric loss rather than any domain-related phenomenon.

Original language	English (US)
Article number	085022
Journal	Smart Materials and Structures
Volume	23
Issue number	8
DOIs	https://doi.org/10.1088/0964-1726/23/8/085022
State	Published - Aug 1 2014

All Science Journal Classification (ASJC) codes

Signal Processing
Civil and Structural Engineering
Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Electrical and Electronic Engineering

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10.1088/0964-1726/23/8/085022

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@article{1b9374f1f1974e899da87c417e11f847,

title = "Crystal-structure dependent domain-switching behavior in BaTiO3 ceramic",

abstract = "Crystal-structure dependent dynamic scaling behavior was investigated for BaTiO3 ceramic. The scaling relation of the form 〈A〉 ∝ fM En0, (where 〈A〉 is the area under the hysteresis loop, while f and E0 represent the frequency and amplitude of the applied electric field signal) was used to determine the values of parameters m and n at various temperatures in the range of -90 °C to 170 °C. The variations in the values of parameters m and n with temperature are explained in terms of the effect of the crystallographic nature of BaTiO 3. The values of parameters m and n obtained for the paraelectric regime suggest that the hysteresis in the P-E (polarization-electric field) loops is related to the dielectric loss rather than any domain-related phenomenon.",

author = "Natthapong Wongdamnern and Kanokwan Kanchiang and Athipong Ngamjarurojana and Supon Ananta and Yongyut Laosiritaworn and Anek Charoenphakdee and Shashaank Gupta and Shashank Priya and Rattikorn Yimnirun",

year = "2014",

month = aug,

day = "1",

doi = "10.1088/0964-1726/23/8/085022",

language = "English (US)",

volume = "23",

journal = "Smart Materials and Structures",

issn = "0964-1726",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Crystal-structure dependent domain-switching behavior in BaTiO3 ceramic

AU - Wongdamnern, Natthapong

AU - Kanchiang, Kanokwan

AU - Ngamjarurojana, Athipong

AU - Ananta, Supon

AU - Laosiritaworn, Yongyut

AU - Charoenphakdee, Anek

AU - Gupta, Shashaank

AU - Priya, Shashank

AU - Yimnirun, Rattikorn

PY - 2014/8/1

Y1 - 2014/8/1

N2 - Crystal-structure dependent dynamic scaling behavior was investigated for BaTiO3 ceramic. The scaling relation of the form 〈A〉 ∝ fM En0, (where 〈A〉 is the area under the hysteresis loop, while f and E0 represent the frequency and amplitude of the applied electric field signal) was used to determine the values of parameters m and n at various temperatures in the range of -90 °C to 170 °C. The variations in the values of parameters m and n with temperature are explained in terms of the effect of the crystallographic nature of BaTiO 3. The values of parameters m and n obtained for the paraelectric regime suggest that the hysteresis in the P-E (polarization-electric field) loops is related to the dielectric loss rather than any domain-related phenomenon.

AB - Crystal-structure dependent dynamic scaling behavior was investigated for BaTiO3 ceramic. The scaling relation of the form 〈A〉 ∝ fM En0, (where 〈A〉 is the area under the hysteresis loop, while f and E0 represent the frequency and amplitude of the applied electric field signal) was used to determine the values of parameters m and n at various temperatures in the range of -90 °C to 170 °C. The variations in the values of parameters m and n with temperature are explained in terms of the effect of the crystallographic nature of BaTiO 3. The values of parameters m and n obtained for the paraelectric regime suggest that the hysteresis in the P-E (polarization-electric field) loops is related to the dielectric loss rather than any domain-related phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=84904438253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904438253&partnerID=8YFLogxK

U2 - 10.1088/0964-1726/23/8/085022

DO - 10.1088/0964-1726/23/8/085022

M3 - Article

AN - SCOPUS:84904438253

SN - 0964-1726

VL - 23

JO - Smart Materials and Structures

JF - Smart Materials and Structures

IS - 8

M1 - 085022

ER -

Crystal-structure dependent domain-switching behavior in BaTiO₃ ceramic

Abstract

All Science Journal Classification (ASJC) codes

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