Crystal-structure dependent domain-switching behavior in BaTiO3 ceramic

Natthapong Wongdamnern, Kanokwan Kanchiang, Athipong Ngamjarurojana, Supon Ananta, Yongyut Laosiritaworn, Anek Charoenphakdee, Shashaank Gupta, Shashank Priya, Rattikorn Yimnirun

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8 Scopus citations


Crystal-structure dependent dynamic scaling behavior was investigated for BaTiO3 ceramic. The scaling relation of the form 〈A〉 ∝ fM En0, (where 〈A〉 is the area under the hysteresis loop, while f and E0 represent the frequency and amplitude of the applied electric field signal) was used to determine the values of parameters m and n at various temperatures in the range of -90 °C to 170 °C. The variations in the values of parameters m and n with temperature are explained in terms of the effect of the crystallographic nature of BaTiO 3. The values of parameters m and n obtained for the paraelectric regime suggest that the hysteresis in the P-E (polarization-electric field) loops is related to the dielectric loss rather than any domain-related phenomenon.

Original languageEnglish (US)
Article number085022
JournalSmart Materials and Structures
Issue number8
StatePublished - Aug 1 2014

All Science Journal Classification (ASJC) codes

  • Signal Processing
  • Civil and Structural Engineering
  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering


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