Crystallographic engineering in high-performance piezoelectric crystals

Seung Eek Park; Satoshi Wada; Paul W. Rehrig; Shi Fang Liu; L. Eric Cross; Thomas R. Shrout

Crystallographic engineering in high-performance piezoelectric crystals

Seung Eek Park
, Satoshi Wada
, Paul W. Rehrig
, Shi Fang Liu
, L. Eric Cross
, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

Crystallographic engineering, a concept to utilize crystal anisotropy as well as an engineered domain configuration, resulted in significant enhancement in piezoelectric activity for normal ferroelectric BaTiO₃ crystals. Electromechanical couplings (k₃₃) to approximately 85% and piezoelectric coefficients (d₃₃) as high as 500 pC/N, higher or comparable to those of lead based ceramics such as PZT and significantly larger than those of tetragonal BaTiO₃ crystals (k₃₃ to approximately 65%, d₃₃ to approximately 130 pC/N), were detected from crystallographically engineered orthorhombic BaTiO₃ crystals. Orthorhombic BaTiO₃ phase could be stabilized by Zr-doping at room temperature and enhanced electromechanical coupling (k₃₃) to approximately 75% was detected also by using crystallographic engineering. Macroscopic symmetry (4 mm) was suggested for 〈001〉 poled rhombohedral (3 m) and orthorhombic (2 mm) crystals, based on the engineered domain configuration.

Original language	English (US)
Pages (from-to)	2-9
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3675
State	Published - 1999
Event	Proceedings of the 1999 Smart Structures and Materials on Smart Materials Technologies - Newport Beach, CA, USA Duration: Mar 3 1999 → Mar 4 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{f713e3642506471e9eb050d6b606dcaa,

title = "Crystallographic engineering in high-performance piezoelectric crystals",

abstract = "Crystallographic engineering, a concept to utilize crystal anisotropy as well as an engineered domain configuration, resulted in significant enhancement in piezoelectric activity for normal ferroelectric BaTiO3 crystals. Electromechanical couplings (k33) to approximately 85\% and piezoelectric coefficients (d33) as high as 500 pC/N, higher or comparable to those of lead based ceramics such as PZT and significantly larger than those of tetragonal BaTiO3 crystals (k33 to approximately 65\%, d33 to approximately 130 pC/N), were detected from crystallographically engineered orthorhombic BaTiO3 crystals. Orthorhombic BaTiO3 phase could be stabilized by Zr-doping at room temperature and enhanced electromechanical coupling (k33) to approximately 75\% was detected also by using crystallographic engineering. Macroscopic symmetry (4 mm) was suggested for 〈001〉 poled rhombohedral (3 m) and orthorhombic (2 mm) crystals, based on the engineered domain configuration.",

author = "Park, \{Seung Eek\} and Satoshi Wada and Rehrig, \{Paul W.\} and Liu, \{Shi Fang\} and Cross, \{L. Eric\} and Shrout, \{Thomas R.\}",

year = "1999",

language = "English (US)",

volume = "3675",

pages = "2--9",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Smart Structures and Materials on Smart Materials Technologies ; Conference date: 03-03-1999 Through 04-03-1999",

}

TY - JOUR

T1 - Crystallographic engineering in high-performance piezoelectric crystals

AU - Park, Seung Eek

AU - Wada, Satoshi

AU - Rehrig, Paul W.

AU - Liu, Shi Fang

AU - Cross, L. Eric

AU - Shrout, Thomas R.

PY - 1999

Y1 - 1999

N2 - Crystallographic engineering, a concept to utilize crystal anisotropy as well as an engineered domain configuration, resulted in significant enhancement in piezoelectric activity for normal ferroelectric BaTiO3 crystals. Electromechanical couplings (k33) to approximately 85% and piezoelectric coefficients (d33) as high as 500 pC/N, higher or comparable to those of lead based ceramics such as PZT and significantly larger than those of tetragonal BaTiO3 crystals (k33 to approximately 65%, d33 to approximately 130 pC/N), were detected from crystallographically engineered orthorhombic BaTiO3 crystals. Orthorhombic BaTiO3 phase could be stabilized by Zr-doping at room temperature and enhanced electromechanical coupling (k33) to approximately 75% was detected also by using crystallographic engineering. Macroscopic symmetry (4 mm) was suggested for 〈001〉 poled rhombohedral (3 m) and orthorhombic (2 mm) crystals, based on the engineered domain configuration.

AB - Crystallographic engineering, a concept to utilize crystal anisotropy as well as an engineered domain configuration, resulted in significant enhancement in piezoelectric activity for normal ferroelectric BaTiO3 crystals. Electromechanical couplings (k33) to approximately 85% and piezoelectric coefficients (d33) as high as 500 pC/N, higher or comparable to those of lead based ceramics such as PZT and significantly larger than those of tetragonal BaTiO3 crystals (k33 to approximately 65%, d33 to approximately 130 pC/N), were detected from crystallographically engineered orthorhombic BaTiO3 crystals. Orthorhombic BaTiO3 phase could be stabilized by Zr-doping at room temperature and enhanced electromechanical coupling (k33) to approximately 75% was detected also by using crystallographic engineering. Macroscopic symmetry (4 mm) was suggested for 〈001〉 poled rhombohedral (3 m) and orthorhombic (2 mm) crystals, based on the engineered domain configuration.

UR - https://www.scopus.com/pages/publications/0032657163

UR - https://www.scopus.com/pages/publications/0032657163#tab=citedBy

M3 - Conference article

AN - SCOPUS:0032657163

SN - 0277-786X

VL - 3675

SP - 2

EP - 9

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Smart Structures and Materials on Smart Materials Technologies

Y2 - 3 March 1999 through 4 March 1999

ER -

Crystallographic engineering in high-performance piezoelectric crystals

Abstract

All Science Journal Classification (ASJC) codes

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