Crystallographic wet chemical etching of GaN

D. A. Stocker; E. F. Schubert; J. M. Redwing

doi:10.1063/1.122543

Crystallographic wet chemical etching of GaN

D. A. Stocker
, E. F. Schubert
, J. M. Redwing

Research output: Contribution to journal › Article › peer-review

227 Scopus citations

Abstract

We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H₃PO₄, molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 °C, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are 0001, 101̄0, 101̄ 1̄, 101̄2̄, and 101̄3. The vertical 101̄0 planes appear perfectly smooth when viewed with a field-effect scanning electron microscope. The activation energy is 21 kcal/mol, indicative of reaction-rate limited etching.

Original language	English (US)
Pages (from-to)	2654-2656
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	18
DOIs	https://doi.org/10.1063/1.122543
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122543

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title = "Crystallographic wet chemical etching of GaN",

abstract = "We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H3PO4, molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 °C, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are 0001, 10{\=1}0, 10{\=1} {\=1}, 10{\=1}{\=2}, and 10{\=1}3. The vertical 10{\=1}0 planes appear perfectly smooth when viewed with a field-effect scanning electron microscope. The activation energy is 21 kcal/mol, indicative of reaction-rate limited etching.",

author = "Stocker, \{D. A.\} and Schubert, \{E. F.\} and Redwing, \{J. M.\}",

year = "1998",

doi = "10.1063/1.122543",

language = "English (US)",

volume = "73",

pages = "2654--2656",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

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T1 - Crystallographic wet chemical etching of GaN

AU - Stocker, D. A.

AU - Schubert, E. F.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H3PO4, molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 °C, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are 0001, 101̄0, 101̄ 1̄, 101̄2̄, and 101̄3. The vertical 101̄0 planes appear perfectly smooth when viewed with a field-effect scanning electron microscope. The activation energy is 21 kcal/mol, indicative of reaction-rate limited etching.

AB - We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H3PO4, molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 °C, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are 0001, 101̄0, 101̄ 1̄, 101̄2̄, and 101̄3. The vertical 101̄0 planes appear perfectly smooth when viewed with a field-effect scanning electron microscope. The activation energy is 21 kcal/mol, indicative of reaction-rate limited etching.

UR - https://www.scopus.com/pages/publications/0001493695

UR - https://www.scopus.com/pages/publications/0001493695#tab=citedBy

U2 - 10.1063/1.122543

DO - 10.1063/1.122543

M3 - Article

AN - SCOPUS:0001493695

SN - 0003-6951

VL - 73

SP - 2654

EP - 2656

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Crystallographic wet chemical etching of GaN

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