TY - GEN
T1 - Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces
AU - Roman, P.
AU - Torek, K.
AU - Shanmugasundaram, K.
AU - Mumbauer, P.
AU - Vestyck, D.
AU - Hammond, P.
AU - Ruzyllo, J.
PY - 2009
Y1 - 2009
N2 - The process in which anhydrous HF (AHF) is mixed with the vapor of an organic solvent for the purpose of etching of native SiO2 on Si surfaces is well established (e.g [1-4]). The process was also explored as part of a dry-wet wafer cleaning sequence [5]. More recently, the same process has been successfully expanded into MEMS technology for the purpose of stiction-free releasing of structures by isotropic etching of sacrificial SiO2 [6,7]. The current strong push in advanced Si digital IC technology toward extremely fragile 3D geometries engraved on Si wafer surfaces, in which case conventional etch methods may not work properly [8], as well as needs with regard to native oxide etching in emerging Si-based technologies such as solar cell manufacturing has brought about renewed interest in AHF technology.
AB - The process in which anhydrous HF (AHF) is mixed with the vapor of an organic solvent for the purpose of etching of native SiO2 on Si surfaces is well established (e.g [1-4]). The process was also explored as part of a dry-wet wafer cleaning sequence [5]. More recently, the same process has been successfully expanded into MEMS technology for the purpose of stiction-free releasing of structures by isotropic etching of sacrificial SiO2 [6,7]. The current strong push in advanced Si digital IC technology toward extremely fragile 3D geometries engraved on Si wafer surfaces, in which case conventional etch methods may not work properly [8], as well as needs with regard to native oxide etching in emerging Si-based technologies such as solar cell manufacturing has brought about renewed interest in AHF technology.
UR - http://www.scopus.com/inward/record.url?scp=75849163220&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=75849163220&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.145-146.231
DO - 10.4028/www.scientific.net/SSP.145-146.231
M3 - Conference contribution
AN - SCOPUS:75849163220
SN - 3908451647
SN - 9783908451648
T3 - Solid State Phenomena
SP - 231
EP - 234
BT - Ultra Clean Processing of Semiconductor Surfaces IX
PB - Trans Tech Publications Ltd
T2 - 9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
Y2 - 22 September 2008 through 24 September 2008
ER -