Current-induced degradation of nickel ohmic contacts to SiC

B. P. Downey; J. R. Flemish; B. Z. Liu; T. E. Clark; S. E. Mohney

doi:10.1007/s11664-008-0612-3

Current-induced degradation of nickel ohmic contacts to SiC

B. P. Downey, J. R. Flemish, B. Z. Liu, T. E. Clark, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The stability of Ni ohmic contacts to p-type SiC under high current density was investigated. A test structure adapted from the four circular contacts method allowed for vertical stressing and the ability to extract a pre- and post-stressed specific contact resistance. The accuracy of the measured specific contact resistance was verified experimentally through comparisons with more widely used methods and the use of computer modeling. The growth of voids initially produced during the high-temperature ohmic contact anneal was found to be the degradation mechanism, effectively decreasing the area of the contact.

Original language	English (US)
Pages (from-to)	563-568
Number of pages	6
Journal	Journal of Electronic Materials
Volume	38
Issue number	4
DOIs	https://doi.org/10.1007/s11664-008-0612-3
State	Published - Apr 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-008-0612-3

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@article{4252f848ef894d9c94274e583da8035a,

title = "Current-induced degradation of nickel ohmic contacts to SiC",

abstract = "The stability of Ni ohmic contacts to p-type SiC under high current density was investigated. A test structure adapted from the four circular contacts method allowed for vertical stressing and the ability to extract a pre- and post-stressed specific contact resistance. The accuracy of the measured specific contact resistance was verified experimentally through comparisons with more widely used methods and the use of computer modeling. The growth of voids initially produced during the high-temperature ohmic contact anneal was found to be the degradation mechanism, effectively decreasing the area of the contact.",

author = "Downey, {B. P.} and Flemish, {J. R.} and Liu, {B. Z.} and Clark, {T. E.} and Mohney, {S. E.}",

note = "Funding Information: This work was supported by the Office of Naval Research under Contract N00014-05-D-0275 DO-0002 and through the use of facilities at the Pennsylvania State University Materials Research Institute Nano Fabrication Network under the National Science Foundation Cooperative Agreement No. 0335765, National Nanotechnology Infrastructure Network, with Cornell University.",

year = "2009",

month = apr,

doi = "10.1007/s11664-008-0612-3",

language = "English (US)",

volume = "38",

pages = "563--568",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Current-induced degradation of nickel ohmic contacts to SiC

AU - Downey, B. P.

AU - Flemish, J. R.

AU - Liu, B. Z.

AU - Clark, T. E.

AU - Mohney, S. E.

N1 - Funding Information: This work was supported by the Office of Naval Research under Contract N00014-05-D-0275 DO-0002 and through the use of facilities at the Pennsylvania State University Materials Research Institute Nano Fabrication Network under the National Science Foundation Cooperative Agreement No. 0335765, National Nanotechnology Infrastructure Network, with Cornell University.

PY - 2009/4

Y1 - 2009/4

N2 - The stability of Ni ohmic contacts to p-type SiC under high current density was investigated. A test structure adapted from the four circular contacts method allowed for vertical stressing and the ability to extract a pre- and post-stressed specific contact resistance. The accuracy of the measured specific contact resistance was verified experimentally through comparisons with more widely used methods and the use of computer modeling. The growth of voids initially produced during the high-temperature ohmic contact anneal was found to be the degradation mechanism, effectively decreasing the area of the contact.

AB - The stability of Ni ohmic contacts to p-type SiC under high current density was investigated. A test structure adapted from the four circular contacts method allowed for vertical stressing and the ability to extract a pre- and post-stressed specific contact resistance. The accuracy of the measured specific contact resistance was verified experimentally through comparisons with more widely used methods and the use of computer modeling. The growth of voids initially produced during the high-temperature ohmic contact anneal was found to be the degradation mechanism, effectively decreasing the area of the contact.

UR - http://www.scopus.com/inward/record.url?scp=61849176101&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=61849176101&partnerID=8YFLogxK

U2 - 10.1007/s11664-008-0612-3

DO - 10.1007/s11664-008-0612-3

M3 - Article

AN - SCOPUS:61849176101

SN - 0361-5235

VL - 38

SP - 563

EP - 568

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Current-induced degradation of nickel ohmic contacts to SiC

Abstract

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