TY - JOUR
T1 - Current limitation after pinch-off in AlGaN/GaN FETs
AU - Dietrich, R.
AU - Wieszt, A.
AU - Vescan, A.
AU - Leier, H.
AU - Redwing, Joan M.
AU - Boutros, Karim S.
AU - Kornitzer, K.
AU - Freitag, R.
AU - Ebner, T.
AU - Thonke, K.
PY - 2000
Y1 - 2000
N2 - Piezoelectric AlGaN/GaN FETs on SiC with high carrier mobility have been fabricated yielding IDS=450 mA/mm and gm=200 mS/mm. In the on-state, under UV-illumination, the devices sustain a drain voltage of V DS=49 V, corresponding to a power dissipation of 26.5 W/mm. On turn-on of the device from the pinch-off state, a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in the on-state. The drain current transients are characterized by a relaxation time τ, which is in the order of several hundred seconds. From the temperature dependence of τ, an activation energy of about 280 meV and a capture cross section of 4.4.10-18 cm 2 were determined. The devices show pronounced persistent photoconductivity (PPC) and the drain current ID is sensitive to illumination.
AB - Piezoelectric AlGaN/GaN FETs on SiC with high carrier mobility have been fabricated yielding IDS=450 mA/mm and gm=200 mS/mm. In the on-state, under UV-illumination, the devices sustain a drain voltage of V DS=49 V, corresponding to a power dissipation of 26.5 W/mm. On turn-on of the device from the pinch-off state, a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in the on-state. The drain current transients are characterized by a relaxation time τ, which is in the order of several hundred seconds. From the temperature dependence of τ, an activation energy of about 280 meV and a capture cross section of 4.4.10-18 cm 2 were determined. The devices show pronounced persistent photoconductivity (PPC) and the drain current ID is sensitive to illumination.
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U2 - 10.1557/s1092578300000028
DO - 10.1557/s1092578300000028
M3 - Article
AN - SCOPUS:3242808950
SN - 1092-5783
VL - 5
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
ER -