Current transport in GaAs Schottky barrier diodes subject to high neutron fluence

S. Ashok; J. M. Borrego; R. J. Gutmann

doi:10.1063/1.327715

Current transport in GaAs Schottky barrier diodes subject to high neutron fluence

S. Ashok, J. M. Borrego, R. J. Gutmann

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current-voltage (I-V) characteristics, with one-carrier space-charge-limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I-V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I-V data taken over a wide temperature range.

Original language	English (US)
Pages (from-to)	1076-1084
Number of pages	9
Journal	Journal of Applied Physics
Volume	51
Issue number	2
DOIs	https://doi.org/10.1063/1.327715
State	Published - 1980

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.327715

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title = "Current transport in GaAs Schottky barrier diodes subject to high neutron fluence",

abstract = "The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current-voltage (I-V) characteristics, with one-carrier space-charge-limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I-V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I-V data taken over a wide temperature range.",

author = "S. Ashok and Borrego, {J. M.} and Gutmann, {R. J.}",

year = "1980",

doi = "10.1063/1.327715",

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AU - Ashok, S.

AU - Borrego, J. M.

AU - Gutmann, R. J.

PY - 1980

Y1 - 1980

N2 - The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current-voltage (I-V) characteristics, with one-carrier space-charge-limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I-V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I-V data taken over a wide temperature range.

AB - The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current-voltage (I-V) characteristics, with one-carrier space-charge-limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I-V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I-V data taken over a wide temperature range.

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Current transport in GaAs Schottky barrier diodes subject to high neutron fluence

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