The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current-voltage (I-V) characteristics, with one-carrier space-charge-limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I-V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I-V data taken over a wide temperature range.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)