Abstract
The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current-voltage (I-V) characteristics, with one-carrier space-charge-limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I-V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I-V data taken over a wide temperature range.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1076-1084 |
| Number of pages | 9 |
| Journal | Journal of Applied Physics |
| Volume | 51 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1980 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
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