Current-voltage characteristics and charge-carrier traps in N-Type 4H-SiC schottky structures

Keyphrases

• Current-voltage Characteristics 100%
• 4H-SiC 100%
• N-Type 4H-SiC 100%
• Schottky Structure 100%
• Charge Carrier Trapping 100%
• Fourier Transform 66%
• Deep Level Transient Spectroscopy 66%
• Electron Traps 66%
• High Performance 33%
• High Temperature 33%
• High-frequency Applications 33%
• Capacitance-voltage 33%
• Power Electronics 33%
• Carrier Trapping 33%
• Fitting Algorithm 33%
• Neutral State 33%
• Parameter Dependence 33%
• Conduction Band Edge 33%
• Temperature Property 33%
• Speed-power 33%
• High Electron Mobility 33%
• Electrically Active Defects 33%
• SiC SBD 33%
• SiC Polytypes 33%
• High-speed Switching 33%
• Capture Cross Section 33%
• Diode Parameters 33%
• Inhomogeneous Barrier Height 33%
• Electron Capture 33%
• SiC Schottky Diode 33%
• Low Power Loss 33%
• Height Analysis 33%
• Charge Transition 33%

Material Science

• Current Voltage Characteristics 100%
• Deep-Level Transient Spectroscopy 100%
• Charge Carrier 100%
• Capacitance 50%
• Schottky Barrier 50%
• Electron Mobility 50%