Current-voltage characteristics and ON/OFF ratio in ferroelectric tunnel junctions

Xiaoyan Lu; Hui Li; Wenwu Cao

doi:10.1063/1.4748051

Current-voltage characteristics and ON/OFF ratio in ferroelectric tunnel junctions

Xiaoyan Lu
, Hui Li
, Wenwu Cao

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Current-voltage characteristics of poled ferroelectric tunnel junction have been theoretically studied with the consideration of piezoelectric effect and interface potential due to the depolarization effect. Compared with piezoelectric effect, barrier potential changed by polarization switching is more significant. Tunnel currents with low and high resistances during the reading process are distinct, which have potential applications as low-cost, high-density, and fast-speed ferroelectric memories. The obtained ON/OFF ratio in a symmetry SrRuO ₃/BaTiO ₃/SrRuO ₃ structure is around 50 under a small applied voltage.

Original language	English (US)
Article number	054102
Journal	Journal of Applied Physics
Volume	112
Issue number	5
DOIs	https://doi.org/10.1063/1.4748051
State	Published - Sep 1 2012

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4748051

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title = "Current-voltage characteristics and ON/OFF ratio in ferroelectric tunnel junctions",

abstract = "Current-voltage characteristics of poled ferroelectric tunnel junction have been theoretically studied with the consideration of piezoelectric effect and interface potential due to the depolarization effect. Compared with piezoelectric effect, barrier potential changed by polarization switching is more significant. Tunnel currents with low and high resistances during the reading process are distinct, which have potential applications as low-cost, high-density, and fast-speed ferroelectric memories. The obtained ON/OFF ratio in a symmetry SrRuO 3/BaTiO 3/SrRuO 3 structure is around 50 under a small applied voltage.",

author = "Xiaoyan Lu and Hui Li and Wenwu Cao",

note = "Funding Information: We thank Professor Earle Ryba and Professor Wenhua Jiang (Materials Research Institute, Pennsylvania State University) for valuable discussions. This research was supported by the Ministry of Science and Technology (No. 2011BAK02B02), National Science Foundation of China (Nos. 11002044, 51078107), the China Postdoctoral Science Foundation (Nos. 20090460068, 201104437), and the Oversea Study Program from the Harbin Institute of Technology.",

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AU - Lu, Xiaoyan

AU - Li, Hui

AU - Cao, Wenwu

N1 - Funding Information: We thank Professor Earle Ryba and Professor Wenhua Jiang (Materials Research Institute, Pennsylvania State University) for valuable discussions. This research was supported by the Ministry of Science and Technology (No. 2011BAK02B02), National Science Foundation of China (Nos. 11002044, 51078107), the China Postdoctoral Science Foundation (Nos. 20090460068, 201104437), and the Oversea Study Program from the Harbin Institute of Technology.

PY - 2012/9/1

Y1 - 2012/9/1

N2 - Current-voltage characteristics of poled ferroelectric tunnel junction have been theoretically studied with the consideration of piezoelectric effect and interface potential due to the depolarization effect. Compared with piezoelectric effect, barrier potential changed by polarization switching is more significant. Tunnel currents with low and high resistances during the reading process are distinct, which have potential applications as low-cost, high-density, and fast-speed ferroelectric memories. The obtained ON/OFF ratio in a symmetry SrRuO 3/BaTiO 3/SrRuO 3 structure is around 50 under a small applied voltage.

AB - Current-voltage characteristics of poled ferroelectric tunnel junction have been theoretically studied with the consideration of piezoelectric effect and interface potential due to the depolarization effect. Compared with piezoelectric effect, barrier potential changed by polarization switching is more significant. Tunnel currents with low and high resistances during the reading process are distinct, which have potential applications as low-cost, high-density, and fast-speed ferroelectric memories. The obtained ON/OFF ratio in a symmetry SrRuO 3/BaTiO 3/SrRuO 3 structure is around 50 under a small applied voltage.

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Current-voltage characteristics and ON/OFF ratio in ferroelectric tunnel junctions

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