Current-voltage characteristics of bilayer graphene nanoribbon field effect transistor

S. Mahdi Mousavi, M. Taghi Ahmadi, Azadeh Nilghaz, Javad Samadi, M. Javad Kiani, Sohail Anwar, Razali Ismail

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Graphene based material as a two-dimensional crystal structure with honeycomb configuration has been considered as a promising candidate for nanoelectronic devices. In this work bilayer grapheme nanoribbon (BLG), which consists of two monolayer graphene structures as a one-dimensional system with unique band structure and remarkable properties, is used in the field effect transistors. The band structure of bilayer graphene has been modeled on the inversion symmetric AB-stacked BLG with a zero-band gap through A1 and B2 sites. The tunable energy gap of BLG can be employed in FET channel region with bottom-gated or top-gated configuration, leading to the controllable band gap. In this paper, current-voltage characteristic of bilayer graphene field effect transistor (BLG FET) is investigated. In addition, comparison study by extracted experimental data is reported, which indicates good agreement between proposed model and experimental data.

Original languageEnglish (US)
Pages (from-to)738-741
Number of pages4
JournalJournal of Computational and Theoretical Nanoscience
Issue number3
StatePublished - Mar 2013

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Computational Mathematics
  • Electrical and Electronic Engineering


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