CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage

Néstor Perea-López, Zhong Lin, Nihar R. Pradhan, Agustín Iñiguez-Rábago, Ana Laura Elías, Amber McCreary, Jun Lou, Pulickel M. Ajayan, Humberto Terrones, Luis Balicas, Mauricio Terrones

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193 Scopus citations


We report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS2 synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS2 on a SiO2/Si substrate. The device was operated in air at room temperature at low bias voltages ranging from -2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W-1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS2. A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.

Original languageEnglish (US)
Article number011004
Journal2D Materials
Issue number1
StatePublished - Jun 1 2014

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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