CVD growth of large area and uniform graphene on tilted copper foil for high performance flexible transparent conductive film

This study has been performed on the synthesis of a large area, uniform graphene film on tilted copper foil against gaseous flow in a chemical vapor deposition (CVD) system. The copper foil on which the graphene grows is tilted against gaseous flow in the CVD process, which promotes the uniformity of graphene due to geometrical fluidic dynamics. The uniform graphene film with grain size up to ten micrometers and few defects has been synthesized on copper foils using optimized parameters including growth time, methane concentration and growth temperature. Field effect transistors made of the grown graphene show high carrier mobilities of 5080.5 cm ² V ^-1 s ^-1, indicating fine quality graphene. These uniform graphenes can be used as high performance, flexible transparent conductors, which show improved tradeoff between conductivity and transparency: the transmittance of 96.5% at 550 nm with sheet resistance of ∼600 Ω sq ^-1, and the transmittance of 86.7% at 550 nm with sheet resistance of ∼400 Ω sq ^-1.