Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low-k polymer interlayer dielectrics

Engineering

• Field-Effect Transistor 100%
• Dielectrics 100%
• Interlayer 100%
• Silicon Oxide 100%
• Plasma Applications 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 20%
• Gate Oxide 20%
• Induced Stress 20%
• Induced Damage 20%
• Si Interface 20%
• Gate Electrode 20%
• Insulating Layer 20%

Material Science

• Silicon 100%
• Field Effect Transistor 100%
• Dielectric Material 100%
• Metal Oxide 100%
• Oxide Compound 40%
• Plasma Etching 40%
• Transistor 20%
• Permittivity 20%
• Metal-Oxide-Semiconductor Field-Effect Transistor 20%
• Silicon Nitride 20%

Keyphrases

• Polymer Interlayer 100%
• Interlayer Dielectric 100%
• Via Etching 60%
• MOSFET Parameters 20%
• Fluorinated Poly(arylene ether)s 20%
• Charge Type 20%
• Transistor Parameters 20%