TY - GEN
T1 - Damping Factor Based PCB Parasitic Inductance Value Optimization to Minimize Voltage Overshoot and Settling Time of Semiconductors
AU - Shahbazi, Reza
AU - Liu, Yunting
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - It is widely recognized that the parasitics of Printed Circuit Board (PCB) will influence the switching transients such as Drain-Source voltage VDS/Collector-Emitter voltage VCE, Gate-Source voltage VGS/Gate-Emitter voltage VGE, and Drain current ID/Collector current IC of MOSFETs/IGBTs. However, due to the packaging, the footprint of semiconductor modules, and PCB tracks, some stray inductance is unavoidable. Although designers' goal is to design a PCB with the minimized possible parasitics, an over-reduced parasitic inductance will lead to a longer settling time for switching transient and subsequently, the switching power loss will be increased. To avoid the potential suboptimized performance caused by a too small parasitic inductance, this paper proposes a method based on the power loop damping factor to find the optimal value for PCB parasitic inductance that improves switching transients such as minimizing turn-off voltage overshoot and settling time. Following the theory, the simulation and experimental results for multiple PCB designs for a SiC MOSFET switch and an IGBT module are presented. Overshoots of 7% and 6.5%, and settling times of 0.11 μs and 0.12 μs are achieved with the critically damped layout design compared to an overshoot of 29% and 22.5%, settling times of 0.78 μs and 0.47 μs using an underdamped PCB layout design for the SiC MOSFET switch and IGBT module, respectively.
AB - It is widely recognized that the parasitics of Printed Circuit Board (PCB) will influence the switching transients such as Drain-Source voltage VDS/Collector-Emitter voltage VCE, Gate-Source voltage VGS/Gate-Emitter voltage VGE, and Drain current ID/Collector current IC of MOSFETs/IGBTs. However, due to the packaging, the footprint of semiconductor modules, and PCB tracks, some stray inductance is unavoidable. Although designers' goal is to design a PCB with the minimized possible parasitics, an over-reduced parasitic inductance will lead to a longer settling time for switching transient and subsequently, the switching power loss will be increased. To avoid the potential suboptimized performance caused by a too small parasitic inductance, this paper proposes a method based on the power loop damping factor to find the optimal value for PCB parasitic inductance that improves switching transients such as minimizing turn-off voltage overshoot and settling time. Following the theory, the simulation and experimental results for multiple PCB designs for a SiC MOSFET switch and an IGBT module are presented. Overshoots of 7% and 6.5%, and settling times of 0.11 μs and 0.12 μs are achieved with the critically damped layout design compared to an overshoot of 29% and 22.5%, settling times of 0.78 μs and 0.47 μs using an underdamped PCB layout design for the SiC MOSFET switch and IGBT module, respectively.
UR - https://www.scopus.com/pages/publications/105004820487
UR - https://www.scopus.com/pages/publications/105004820487#tab=citedBy
U2 - 10.1109/APEC48143.2025.10977385
DO - 10.1109/APEC48143.2025.10977385
M3 - Conference contribution
AN - SCOPUS:105004820487
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 1179
EP - 1183
BT - APEC 2025 - 14th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2025
Y2 - 16 March 2025 through 20 March 2025
ER -