dc ANALYSIS AND DESIGN OF THE MAJORITY CARRIER ACCUMULATION MOSFET.

Pierre E. Schmidt; Mukunda B. Das; Paul D. Esqueda

doi:10.1080/00207218308938751

dc ANALYSIS AND DESIGN OF THE MAJORITY CARRIER ACCUMULATION MOSFET.

Pierre E. Schmidt
, Mukunda B. Das
, Paul D. Esqueda

Penn State Berks

Research output: Contribution to journal › Article › peer-review

Abstract

A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. For an n-channel device, the structure consists of a thin n-type layer on a p-type substrate. By appropriate choice of the n-layer thickness and the donor and acceptor concentrations the n-layer can be completely depleted due to the built-in junction potential or if necessary by applying a suitable substrate bias. The dc current-voltage characteristics are calculated using the depletion approximation.

Original language	English (US)
Pages (from-to)	531-540
Number of pages	10
Journal	International Journal of Electronics
Volume	54
Issue number	4
DOIs	https://doi.org/10.1080/00207218308938751
State	Published - 1983

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/00207218308938751

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@article{a2e1282f8b9c4dda83b16e6f71ee7a08,

title = "dc ANALYSIS AND DESIGN OF THE MAJORITY CARRIER ACCUMULATION MOSFET.",

abstract = "A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. For an n-channel device, the structure consists of a thin n-type layer on a p-type substrate. By appropriate choice of the n-layer thickness and the donor and acceptor concentrations the n-layer can be completely depleted due to the built-in junction potential or if necessary by applying a suitable substrate bias. The dc current-voltage characteristics are calculated using the depletion approximation.",

author = "Schmidt, \{Pierre E.\} and Das, \{Mukunda B.\} and Esqueda, \{Paul D.\}",

note = "Funding Information: ACKNOWLEDGMENTS One of the authors (M.B.D.) wants to express his thanks to the Consejo Nacional de Investigaciones Cientificas y Tecnol6gicas (CONIClT) for providing a travel grant and to the Instituto Venezolano de Investigaciones Cientlficas (lVIC) where the work was done. This work was supported in part by CONIOIT Grant No.Sl-933. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "1983",

doi = "10.1080/00207218308938751",

language = "English (US)",

volume = "54",

pages = "531--540",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

number = "4",

}

TY - JOUR

T1 - dc ANALYSIS AND DESIGN OF THE MAJORITY CARRIER ACCUMULATION MOSFET.

AU - Schmidt, Pierre E.

AU - Das, Mukunda B.

AU - Esqueda, Paul D.

N1 - Funding Information: ACKNOWLEDGMENTS One of the authors (M.B.D.) wants to express his thanks to the Consejo Nacional de Investigaciones Cientificas y Tecnol6gicas (CONIClT) for providing a travel grant and to the Instituto Venezolano de Investigaciones Cientlficas (lVIC) where the work was done. This work was supported in part by CONIOIT Grant No.Sl-933. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 1983

Y1 - 1983

N2 - A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. For an n-channel device, the structure consists of a thin n-type layer on a p-type substrate. By appropriate choice of the n-layer thickness and the donor and acceptor concentrations the n-layer can be completely depleted due to the built-in junction potential or if necessary by applying a suitable substrate bias. The dc current-voltage characteristics are calculated using the depletion approximation.

AB - A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. For an n-channel device, the structure consists of a thin n-type layer on a p-type substrate. By appropriate choice of the n-layer thickness and the donor and acceptor concentrations the n-layer can be completely depleted due to the built-in junction potential or if necessary by applying a suitable substrate bias. The dc current-voltage characteristics are calculated using the depletion approximation.

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U2 - 10.1080/00207218308938751

DO - 10.1080/00207218308938751

M3 - Article

AN - SCOPUS:0020734432

SN - 0020-7217

VL - 54

SP - 531

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JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 4

ER -

dc ANALYSIS AND DESIGN OF THE MAJORITY CARRIER ACCUMULATION MOSFET.

Abstract

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