Decentralization of the Heating in Multi-Finger α-Ga2O3 Ultra-Wide Bandgap Electronics

Daniel C. Shoemaker; Yiwen Song; Anwarul Karim; Pegah Ghanizadeh; Nazli Donmezer; Ji Hyeon Park; Dae Woo Jeon; Hun Ki Lee; Jae Kyoung Mun; Sukwon Choi

doi:10.1109/LED.2024.3513872

Decentralization of the Heating in Multi-Finger α-Ga₂O₃ Ultra-Wide Bandgap Electronics

Daniel C. Shoemaker, Yiwen Song, Anwarul Karim, Pegah Ghanizadeh, Nazli Donmezer, Ji Hyeon Park, Dae Woo Jeon, Hun Ki Lee, Jae Kyoung Mun, Sukwon Choi

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

— α-Ga₂O₃ is one of the ultra-wide bandgap semiconductors that gives promise to the development of next-generation power electronics. However, due to its thermodynamic instability and low thermal conductivity, overheating concerns hinder the deployment of α-Ga₂O₃ devices. This study reveals the detrimental impact of thermal crosstalk in multi-finger α-Ga₂O₃ MOSFETs. The thermal conductivity of α-Ga₂O₃ (∼12 W/m·K at room temperature) was determined via first-principles calculations and laser-based pump-probe measurements. Device thermal characterization and modeling were performed to design a vertebrae-shaped multi-finger device layout that mitigates thermal crosstalk by decentralizing the overall device heat generation profile.

Original language	English (US)
Pages (from-to)	266-269
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	46
Issue number	2
DOIs	https://doi.org/10.1109/LED.2024.3513872
State	Published - 2025

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2024.3513872

Cite this

@article{fd411a43ab8b4c3ca57fc58d11bc3242,

title = "Decentralization of the Heating in Multi-Finger α-Ga2O3 Ultra-Wide Bandgap Electronics",

abstract = "— α-Ga2O3 is one of the ultra-wide bandgap semiconductors that gives promise to the development of next-generation power electronics. However, due to its thermodynamic instability and low thermal conductivity, overheating concerns hinder the deployment of α-Ga2O3 devices. This study reveals the detrimental impact of thermal crosstalk in multi-finger α-Ga2O3 MOSFETs. The thermal conductivity of α-Ga2O3 (∼12 W/m·K at room temperature) was determined via first-principles calculations and laser-based pump-probe measurements. Device thermal characterization and modeling were performed to design a vertebrae-shaped multi-finger device layout that mitigates thermal crosstalk by decentralizing the overall device heat generation profile.",

author = "Shoemaker, \{Daniel C.\} and Yiwen Song and Anwarul Karim and Pegah Ghanizadeh and Nazli Donmezer and Park, \{Ji Hyeon\} and Jeon, \{Dae Woo\} and Lee, \{Hun Ki\} and Mun, \{Jae Kyoung\} and Sukwon Choi",

year = "2025",

doi = "10.1109/LED.2024.3513872",

language = "English (US)",

volume = "46",

pages = "266--269",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Decentralization of the Heating in Multi-Finger α-Ga2O3 Ultra-Wide Bandgap Electronics

AU - Shoemaker, Daniel C.

AU - Song, Yiwen

AU - Karim, Anwarul

AU - Ghanizadeh, Pegah

AU - Donmezer, Nazli

AU - Park, Ji Hyeon

AU - Jeon, Dae Woo

AU - Lee, Hun Ki

AU - Mun, Jae Kyoung

AU - Choi, Sukwon

PY - 2025

Y1 - 2025

N2 - — α-Ga2O3 is one of the ultra-wide bandgap semiconductors that gives promise to the development of next-generation power electronics. However, due to its thermodynamic instability and low thermal conductivity, overheating concerns hinder the deployment of α-Ga2O3 devices. This study reveals the detrimental impact of thermal crosstalk in multi-finger α-Ga2O3 MOSFETs. The thermal conductivity of α-Ga2O3 (∼12 W/m·K at room temperature) was determined via first-principles calculations and laser-based pump-probe measurements. Device thermal characterization and modeling were performed to design a vertebrae-shaped multi-finger device layout that mitigates thermal crosstalk by decentralizing the overall device heat generation profile.

AB - — α-Ga2O3 is one of the ultra-wide bandgap semiconductors that gives promise to the development of next-generation power electronics. However, due to its thermodynamic instability and low thermal conductivity, overheating concerns hinder the deployment of α-Ga2O3 devices. This study reveals the detrimental impact of thermal crosstalk in multi-finger α-Ga2O3 MOSFETs. The thermal conductivity of α-Ga2O3 (∼12 W/m·K at room temperature) was determined via first-principles calculations and laser-based pump-probe measurements. Device thermal characterization and modeling were performed to design a vertebrae-shaped multi-finger device layout that mitigates thermal crosstalk by decentralizing the overall device heat generation profile.

UR - http://www.scopus.com/inward/record.url?scp=85212263908&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85212263908&partnerID=8YFLogxK

U2 - 10.1109/LED.2024.3513872

DO - 10.1109/LED.2024.3513872

M3 - Article

AN - SCOPUS:85212263908

SN - 0741-3106

VL - 46

SP - 266

EP - 269

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Decentralization of the Heating in Multi-Finger α-Ga₂O₃ Ultra-Wide Bandgap Electronics

Abstract

All Science Journal Classification (ASJC) codes

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