Decentralization of the Heating in Multi-Finger α-Ga₂O₃ Ultra-Wide Bandgap Electronics

— α-Ga₂O₃ is one of the ultra-wide bandgap semiconductors that gives promise to the development of next-generation power electronics. However, due to its thermodynamic instability and low thermal conductivity, overheating concerns hinder the deployment of α-Ga₂O₃ devices. This study reveals the detrimental impact of thermal crosstalk in multi-finger α-Ga₂O₃ MOSFETs. The thermal conductivity of α-Ga₂O₃ (∼12 W/m·K at room temperature) was determined via first-principles calculations and laser-based pump-probe measurements. Device thermal characterization and modeling were performed to design a vertebrae-shaped multi-finger device layout that mitigates thermal crosstalk by decentralizing the overall device heat generation profile.