TY - JOUR
T1 - Declamped Piezoelectric Coefficients in Patterned 70/30 Lead Magnesium Niobate–Lead Titanate Thin Films
AU - Keech, Ryan
AU - Ye, Linghan
AU - Bosse, James L.
AU - Esteves, Giovanni
AU - Guerrier, Jonathon
AU - Jones, Jacob L.
AU - Kuroda, Marcelo A.
AU - Huey, Bryan D.
AU - Trolier-McKinstry, Susan
N1 - Funding Information:
The authors gratefully acknowledge the transmission electron microscopy performed by Ke Wang at the Materials Characterization Laboratory, as well as the use of the Nanofabrication facility of the Pennsylvania State University and the technical assistance of Zhonghou Cai at beamline 2-ID-D of the Advanced Photon Source at Argonne National Laboratory. This work was funded by the Penn State MRSEC (NSF DMR-1420620) and NSF DMR-1410907, NSF-IMR-0817263 and DOE-BES-ESPM project DE-SC0005037 (UConn), and NSF DMR-1409399 (NC State). Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under Contract No. DE-AC02-06CH11357.
Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/3/3
Y1 - 2017/3/3
N2 - Lateral subdivision of blanket piezoelectric thin films increases the functional properties through both increased domain wall mobility and declamping of the intrinsic response. This work presents the local effects of substrate declamping on the piezoelectric coefficient d33,f of 300 nm thick, rhombohedral, {001}-oriented lead magnesium niobate–lead titanate thin films at the 70/30 composition (70PMN–30PT). Films grown by chemical solution deposition on platinized Si substrates are patterned into strip structures ranging from 0.75 to 9 µm in width. The longitudinal piezoelectric coefficient, d33,f, is interrogated as a function of position across the patterned structures by three approaches: finite element modeling, piezoresponse force microscopy, and nanoprobe synchrotron X-ray diffraction. It is found that d33,f increases from the clamped value of 40–50 to ≈160 pm V−1 at the free sidewall under 200 kV cm−1 excitation. The sidewalls partially declamp the piezoelectric response 500–600 nm into the patterned structure, raising the piezoelectric response at the center of features with lateral dimensions less than 1 µm (3:1 width to thickness aspect ratio). The normalized data from all three methods are in excellent agreement, with quantitative differences providing insight to the field dependence of the piezoelectric coefficient and its declamping behavior.
AB - Lateral subdivision of blanket piezoelectric thin films increases the functional properties through both increased domain wall mobility and declamping of the intrinsic response. This work presents the local effects of substrate declamping on the piezoelectric coefficient d33,f of 300 nm thick, rhombohedral, {001}-oriented lead magnesium niobate–lead titanate thin films at the 70/30 composition (70PMN–30PT). Films grown by chemical solution deposition on platinized Si substrates are patterned into strip structures ranging from 0.75 to 9 µm in width. The longitudinal piezoelectric coefficient, d33,f, is interrogated as a function of position across the patterned structures by three approaches: finite element modeling, piezoresponse force microscopy, and nanoprobe synchrotron X-ray diffraction. It is found that d33,f increases from the clamped value of 40–50 to ≈160 pm V−1 at the free sidewall under 200 kV cm−1 excitation. The sidewalls partially declamp the piezoelectric response 500–600 nm into the patterned structure, raising the piezoelectric response at the center of features with lateral dimensions less than 1 µm (3:1 width to thickness aspect ratio). The normalized data from all three methods are in excellent agreement, with quantitative differences providing insight to the field dependence of the piezoelectric coefficient and its declamping behavior.
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U2 - 10.1002/adfm.201605014
DO - 10.1002/adfm.201605014
M3 - Article
AN - SCOPUS:85009754187
SN - 1616-301X
VL - 27
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 9
M1 - 1605014
ER -