@inproceedings{4b968988b6b04641ab5ff9b99cd43d61,
title = "Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition",
abstract = "Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000°C and 2100°C Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.",
author = "Huh, {S. W.} and Polyakov, {A. Y.} and Chung, {H. J.} and S. Nigam and M. Skowronski and Glaser, {E. R.} and Carlos, {W. E.} and Fanton, {M. A.} and Smirnov, {N. B.}",
year = "2006",
doi = "10.4028/0-87849-425-1.497",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "497--500",
booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",
edition = "PART 1",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}