Deep level defects involved in MOS device instabilities

P. M. Lenahan

doi:10.1016/j.microrel.2006.10.016

Deep level defects involved in MOS device instabilities

P. M. Lenahan

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.

Original language	English (US)
Pages (from-to)	890-898
Number of pages	9
Journal	Microelectronics Reliability
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/j.microrel.2006.10.016
State	Published - Jun 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.microrel.2006.10.016

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title = "Deep level defects involved in MOS device instabilities",

abstract = "The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.",

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year = "2007",

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AB - The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.

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UR - https://www.scopus.com/pages/publications/34247897087#tab=citedBy

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DO - 10.1016/j.microrel.2006.10.016

M3 - Article

AN - SCOPUS:34247897087

SN - 0026-2714

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EP - 898

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 6

ER -

Deep level defects involved in MOS device instabilities

Abstract

All Science Journal Classification (ASJC) codes

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