Deep traps in high resistivity AlGaN films

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. M. Redwing

doi:10.1016/S0038-1101(98)00089-6

Deep traps in high resistivity AlGaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Deep levels were studied in undoped high resistivity Al_x-Ga_1-xN films grown by metal organic chemical vapor deposition on sapphire. Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies ranging from 0.2 to 0.36 eV for AlGaN compositions in the range 0.05 < x < 0.25. Similar hole traps were detected by means of photoinduced current transient spectroscopy (PICTS) which also revealed the presence of additional hole traps situated 0.85-1.0 eV above the top of the valence band.

Original language	English (US)
Pages (from-to)	831-838
Number of pages	8
Journal	Solid-State Electronics
Volume	42
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1101(98)00089-6
State	Published - May 6 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(98)00089-6

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title = "Deep traps in high resistivity AlGaN films",

abstract = "Deep levels were studied in undoped high resistivity Alx-Ga1-xN films grown by metal organic chemical vapor deposition on sapphire. Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies ranging from 0.2 to 0.36 eV for AlGaN compositions in the range 0.05 < x < 0.25. Similar hole traps were detected by means of photoinduced current transient spectroscopy (PICTS) which also revealed the presence of additional hole traps situated 0.85-1.0 eV above the top of the valence band.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Redwing, {J. M.}",

note = "Funding Information: The work at IRM was supported in part by a grant from the U.S. Civilian Research and Development Foundation (Grant RP1-211) and a grant from the Russian Foundation for Fundamental Research (Grant 97-02-17076). The authors would like to thank E. F. Astakhova and G. V. Petrovicheva for experimental assistance. ",

year = "1998",

month = may,

day = "6",

doi = "10.1016/S0038-1101(98)00089-6",

language = "English (US)",

volume = "42",

pages = "831--838",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Deep traps in high resistivity AlGaN films

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Redwing, J. M.

N1 - Funding Information: The work at IRM was supported in part by a grant from the U.S. Civilian Research and Development Foundation (Grant RP1-211) and a grant from the Russian Foundation for Fundamental Research (Grant 97-02-17076). The authors would like to thank E. F. Astakhova and G. V. Petrovicheva for experimental assistance.

PY - 1998/5/6

Y1 - 1998/5/6

N2 - Deep levels were studied in undoped high resistivity Alx-Ga1-xN films grown by metal organic chemical vapor deposition on sapphire. Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies ranging from 0.2 to 0.36 eV for AlGaN compositions in the range 0.05 < x < 0.25. Similar hole traps were detected by means of photoinduced current transient spectroscopy (PICTS) which also revealed the presence of additional hole traps situated 0.85-1.0 eV above the top of the valence band.

AB - Deep levels were studied in undoped high resistivity Alx-Ga1-xN films grown by metal organic chemical vapor deposition on sapphire. Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies ranging from 0.2 to 0.36 eV for AlGaN compositions in the range 0.05 < x < 0.25. Similar hole traps were detected by means of photoinduced current transient spectroscopy (PICTS) which also revealed the presence of additional hole traps situated 0.85-1.0 eV above the top of the valence band.

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Deep traps in high resistivity AlGaN films

Abstract

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