TY - GEN
T1 - Defect contributions to the anomalous permittivity in CaCu 3Ti 4O 12 ceramics
AU - Aygün, Seymen
AU - Tan, Xiaoli
AU - Cann, David
AU - Maria, Jon Paul
PY - 2006
Y1 - 2006
N2 - Recent reports on CaCu 3Ti 4O 12 (CCT) have attributed the anomalously large permittivity to Maxwell-Wagner effects due to the presence of space charge [I. P. Raevski et al. J. Appl. Phys. 93, 4130 (2003)]. In this work, TEM analysis on polycrystalline samples revealed unique microstructural features including dislocation networks on the micrometer scale and twin-like structures on the 10 nm scale. In addition, the dielectric spectra exhibited two relaxation-like features at approximately 100 K and 400 K. The low temperature permittivity was relatively insensitive to processing conditions. However, the high temperature permittivity increased dramatically with increasing oxygen partial pressure during annealing. This suggests that while the presence of charge carriers plays a role in the dielectric response of CaCu 3Ti 4O 12, they are not solely responsible for the anomalously large room temperature permittivity.
AB - Recent reports on CaCu 3Ti 4O 12 (CCT) have attributed the anomalously large permittivity to Maxwell-Wagner effects due to the presence of space charge [I. P. Raevski et al. J. Appl. Phys. 93, 4130 (2003)]. In this work, TEM analysis on polycrystalline samples revealed unique microstructural features including dislocation networks on the micrometer scale and twin-like structures on the 10 nm scale. In addition, the dielectric spectra exhibited two relaxation-like features at approximately 100 K and 400 K. The low temperature permittivity was relatively insensitive to processing conditions. However, the high temperature permittivity increased dramatically with increasing oxygen partial pressure during annealing. This suggests that while the presence of charge carriers plays a role in the dielectric response of CaCu 3Ti 4O 12, they are not solely responsible for the anomalously large room temperature permittivity.
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M3 - Conference contribution
AN - SCOPUS:33745953009
SN - 156677425X
SN - 9781566774253
T3 - Proceedings - Electrochemical Society
SP - 197
EP - 205
BT - Interfaces in Electronic Materials - Proceedings of the International Symposium
T2 - 204th Electrochemical Society Fall Meeting
Y2 - 12 October 2003 through 16 October 2003
ER -