Defect-driven ion storage on hexagonal boron nitride for fire-safe and high-performance lithium-ion batteries

Yu Lei, Venkata Sai Avvaru, Zachary Ward, He Liu, Kazunori Fujisawa, George Bepete, Na Zhang, Andres Fest Carreno, Humberto Terrones, Vinodkumar Etacheri, Mauricio Terrones

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The mass market adoption of electric vehicles has increased the risk of safety concerns, such as overheating and flammability. Rational design of fire-safe and high-capacity anodes with thermal tolerance, capable of fast-charging and long cycle-life, is crucial for the development of next generation Li-ion batteries operating under extreme conditions. Here we report a defect engineered hexagonal boron nitride (hBN) anode to mediate the safety dilemma. We demonstrate that the defects generated via cryomilling catalyze the reversible LiF formation and enable the pseudocapacitive type Li-ion storage on hBN. The non-flammability and excellent thermal tolerance of hBN allows high specific capacity (880 mAh/g @ 25 mA/g), rate performance (480 mAh/g @ 5 A/g) and stable cycling (5000 cycles) at 60 °C. The Li-ion full-cell with the defective hBN anode and the conventional cathode (LiNiMnCoO2) delivers significantly higher energy (400 Wh kg−1) and power density (1 kW kg−1) when compared to graphite/LiNiMnCoO2 full-cells (121 Wh kg−1 and 250 W kg−1). First-principles calculations confirm that nitrogen antisite (NBVN) defects are responsible for the electrochemical activation of otherwise inactive hBN. The strategy of defect-induced electrochemical activation opens up new avenues in the design of high-performance electrode materials for numerous secondary batteries.

Original languageEnglish (US)
Article number155347
JournalChemical Engineering Journal
Volume498
DOIs
StatePublished - Oct 15 2024

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Environmental Chemistry
  • General Chemical Engineering
  • Industrial and Manufacturing Engineering

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