Defect Engineering in Single-Layer MoS 2 Using Heavy Ion Irradiation

Zuyun He, Ran Zhao, Xiaofei Chen, Huijun Chen, Yunmin Zhu, Huimin Su, Shengxi Huang, Jianming Xue, Junfeng Dai, Shuang Cheng, Meilin Liu, Xinwei Wang, Yan Chen

Research output: Contribution to journalArticlepeer-review

132 Scopus citations


Transition metal dichalcogenides (TMDs) have attracted much attention due to their promising optical, electronic, magnetic, and catalytic properties. Engineering the defects in TMDs represents an effective way to achieve novel functionalities and superior performance of TMDs devices. However, it remains a significant challenge to create defects in TMDs in a controllable manner or to correlate the nature of defects with their functionalities. In this work, taking single-layer MoS 2 as a model system, defects with controlled densities are generated by 500 keV Au irradiation with different ion fluences, and the generated defects are mostly S vacancies. We further show that the defects introduced by ion irradiation can significantly affect the properties of the single-layer MoS 2 , leading to considerable changes in its photoluminescence characteristics and electrocatalytic behavior. As the defect density increases, the characteristic photoluminescence peak of MoS 2 first blueshifts and then redshifts, which is likely due to the electron transfer from MoS 2 to the adsorbed O 2 at the defect sites. The generation of the defects can also strongly improve the hydrogen evolution reaction activity of MoS 2 , attributed to the modified adsorption of atomic hydrogen at the defects.

Original languageEnglish (US)
Pages (from-to)42524-42533
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number49
StatePublished - Dec 12 2018

All Science Journal Classification (ASJC) codes

  • General Materials Science


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