Defect engineering of two-dimensional transition metal dichalcogenides

Zhong Lin, Bruno R. Carvalho, Ethan Kahn, Ruitao Lv, Rahul Rao, Humberto Terrones, Marcos A. Pimenta, Mauricio Terrones

Research output: Contribution to journalReview articlepeer-review

772 Scopus citations


Two-dimensional transition metal dichalcogenides (TMDs),anemerging family oflayered materials, have provided researchersafertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applicationsof TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defectsis important in orderto move forward the field of Defect Engineering in TMDs. Finally,we also provide our perspective on the challenges and opportunities in this emerging field.

Original languageEnglish (US)
Article number022002
Journal2D Materials
Issue number2
StatePublished - Apr 13 2016

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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