Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3

Petrucio Barrozo, Didrik René Småbråten, Yun Long Tang, Bhagwati Prasad, Sahar Saremi, Rustem Ozgur, Vishal Thakare, Rachel A. Steinhardt, Megan E. Holtz, Vladimir Alexandru Stoica, Lane W. Martin, Darrel G. Schlom, Sverre Magnus Selbach, Ramamoorthy Ramesh

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.

Original languageEnglish (US)
Article number2000508
JournalAdvanced Materials
Volume32
Issue number23
DOIs
StatePublished - Jun 1 2020

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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