TY - JOUR
T1 - Defect interactions of H2 in SiO2
T2 - Implications for ELDRS and latent interface trap buildup
AU - Tuttle, Blair R.
AU - Hughart, David R.
AU - Schrimpf, Ronald D.
AU - Fleetwood, Daniel M.
AU - Pantelides, Sokrates T.
N1 - Funding Information:
Manuscript received July 16, 2010; revised September 15, 2010; accepted October 01, 2010. Date of current version December 15, 2010. This work was supported by the Air Force Office of Scientific Research with funding from the MURI program, the NASA Electronic Parts Program, and the Defense Threat Reduction Agency.
PY - 2010/12
Y1 - 2010/12
N2 - The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an Eγ′ defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H 2, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.
AB - The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an Eγ′ defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H 2, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.
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U2 - 10.1109/TNS.2010.2086076
DO - 10.1109/TNS.2010.2086076
M3 - Article
AN - SCOPUS:78650324915
SN - 0018-9499
VL - 57
SP - 3046
EP - 3053
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 6 PART 1
M1 - 5658003
ER -