Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup

Blair R. Tuttle; David R. Hughart; Ronald D. Schrimpf; Daniel M. Fleetwood; Sokrates T. Pantelides

doi:10.1109/TNS.2010.2086076

Defect interactions of H₂ in SiO₂: Implications for ELDRS and latent interface trap buildup

Blair R. Tuttle
, David R. Hughart
, Ronald D. Schrimpf
, Daniel M. Fleetwood
, Sokrates T. Pantelides

School of Science (Behrend)

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

The energetics of the interactions between molecular hydrogen and common defects in SiO₂ that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H₂ does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an E_γ′ defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H ₂, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.

Original language	English (US)
Article number	5658003
Pages (from-to)	3046-3053
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	57
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/TNS.2010.2086076
State	Published - Dec 2010

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2010.2086076

Cite this

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title = "Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup",

abstract = "The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an Eγ′ defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H 2, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.",

author = "Tuttle, \{Blair R.\} and Hughart, \{David R.\} and Schrimpf, \{Ronald D.\} and Fleetwood, \{Daniel M.\} and Pantelides, \{Sokrates T.\}",

note = "Funding Information: Manuscript received July 16, 2010; revised September 15, 2010; accepted October 01, 2010. Date of current version December 15, 2010. This work was supported by the Air Force Office of Scientific Research with funding from the MURI program, the NASA Electronic Parts Program, and the Defense Threat Reduction Agency.",

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AU - Fleetwood, Daniel M.

AU - Pantelides, Sokrates T.

N1 - Funding Information: Manuscript received July 16, 2010; revised September 15, 2010; accepted October 01, 2010. Date of current version December 15, 2010. This work was supported by the Air Force Office of Scientific Research with funding from the MURI program, the NASA Electronic Parts Program, and the Defense Threat Reduction Agency.

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N2 - The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an Eγ′ defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H 2, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.

AB - The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an Eγ′ defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H 2, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.

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Defect interactions of H₂ in SiO₂: Implications for ELDRS and latent interface trap buildup

Abstract

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