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Defect states in 2.0-MeV electron-irradiated phosphorus-doped silicon
O. O. Awadelkarim
, B. Monemar
Engineering Science and Mechanics
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peer-review
10
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Keyphrases
Cm(III)
100%
Defect States
100%
Electron Traps
100%
Phosphorus-doped Silicon
100%
MeV Electrons
100%
P-type Doping
75%
Annealing
50%
Hole Trapping
50%
Phosphorus
25%
Irradiation
25%
Room Temperature
25%
Thermal Annealing
25%
Silicon Sample
25%
Deep Level Transient Spectroscopy
25%
Two-state
25%
Defect Centers
25%
Thermally Activated Processes
25%
Electric Field Strength
25%
Conduction Band Edge
25%
Diode
25%
Phosphorus Concentration
25%
Doped Materials
25%
Post-irradiation
25%
Valence Band Edge
25%
Deep Traps
25%
Capture Cross Section
25%
Depletion Region
25%
Cool-down
25%
Physics
Field Strength
100%
Electric Fields
100%
Transients
100%
Room Temperature
100%
Absorption Cross Sections
100%
Engineering
Defects
100%
Electron Trap
100%
Room Temperature
25%
Transients
25%
Deep Level
25%
Bistables
25%
Band Edge
25%
Conduction Band
25%
Electric Field Strength
25%
Valence Band
25%
Capture Cross Section
25%
Phosphorus Concentration
25%
Depletion Region
25%
Chemistry
Silicon
100%
Electron Trap
100%
Hole Trap
50%
Ambient Reaction Temperature
25%
Electric Field
25%
Conduction Band
25%
Valence Band
25%
Deep Level Transient Spectroscopy
25%
Deep Trap
25%
Material Science
Silicon
100%
Annealing
100%
Mechanical Strength
50%
Deep-Level Transient Spectroscopy
50%