Defects and impurities in thermal oxides on silicon

K. L. Brower; P. M. Lenahan; P. V. Dressendorfer

doi:10.1063/1.93484

Defects and impurities in thermal oxides on silicon

K. L. Brower, P. M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

Oxides grown at 1100°C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were ⁶⁰Co γ irradiated at 4 K with doses up to 10⁶ rad (Si). In situ electron paramagnetic resonance measurements at 10 K revealed ≊3×10¹⁷ atomic hydrogen/cm³ and ∼10 ¹⁷ oxygen-hole centers/cm³ in the oxide. The paramagnetic dangling bond on the silicon side of the Si/SiO₂ interface (P _b center) was also observed. The (relative) concentration of these centers was measured as a function of isochronal annealing between 10 and 300 K.

Original language	English (US)
Pages (from-to)	251-253
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	3
DOIs	https://doi.org/10.1063/1.93484
State	Published - 1982

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.93484

Cite this

@article{77a5890e08cd48278d44c58cd347b068,

title = "Defects and impurities in thermal oxides on silicon",

abstract = "Oxides grown at 1100°C in dry oxygen for 60 min to a thickness of 1350 {\AA} on silicon with and without subsequent forming gas anneals were 60Co γ irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic resonance measurements at 10 K revealed ≊3×1017 atomic hydrogen/cm3 and ∼10 17 oxygen-hole centers/cm3 in the oxide. The paramagnetic dangling bond on the silicon side of the Si/SiO2 interface (P b center) was also observed. The (relative) concentration of these centers was measured as a function of isochronal annealing between 10 and 300 K.",

author = "Brower, {K. L.} and Lenahan, {P. M.} and Dressendorfer, {P. V.}",

year = "1982",

doi = "10.1063/1.93484",

language = "English (US)",

volume = "41",

pages = "251--253",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Defects and impurities in thermal oxides on silicon

AU - Brower, K. L.

AU - Lenahan, P. M.

AU - Dressendorfer, P. V.

PY - 1982

Y1 - 1982

N2 - Oxides grown at 1100°C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co γ irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic resonance measurements at 10 K revealed ≊3×1017 atomic hydrogen/cm3 and ∼10 17 oxygen-hole centers/cm3 in the oxide. The paramagnetic dangling bond on the silicon side of the Si/SiO2 interface (P b center) was also observed. The (relative) concentration of these centers was measured as a function of isochronal annealing between 10 and 300 K.

AB - Oxides grown at 1100°C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co γ irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic resonance measurements at 10 K revealed ≊3×1017 atomic hydrogen/cm3 and ∼10 17 oxygen-hole centers/cm3 in the oxide. The paramagnetic dangling bond on the silicon side of the Si/SiO2 interface (P b center) was also observed. The (relative) concentration of these centers was measured as a function of isochronal annealing between 10 and 300 K.

UR - http://www.scopus.com/inward/record.url?scp=36749117035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749117035&partnerID=8YFLogxK

U2 - 10.1063/1.93484

DO - 10.1063/1.93484

M3 - Article

AN - SCOPUS:36749117035

SN - 0003-6951

VL - 41

SP - 251

EP - 253

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Defects and impurities in thermal oxides on silicon

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this