Defects produced by medium energy proton bombardment of MOS devices

P. M. Lenahan; T. D. Mishima; J. B. Jumper; Thomas N. Fogarty; M. Marrero; L. Cruz; S. Shojah-Ardalan; R. Dwivedi; Richard Wilkins; L. P. Trombetta; C. Singh

Defects produced by medium energy proton bombardment of MOS devices

P. M. Lenahan, T. D. Mishima, J. B. Jumper, Thomas N. Fogarty, M. Marrero, L. Cruz, S. Shojah-Ardalan, R. Dwivedi, Richard Wilkins, L. P. Trombetta, C. Singh

Research output: Contribution to conference › Paper › peer-review

Abstract

We report results of very sensitive electron spin (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We observe that the measured defect density levels are similar for both the ESR measurements and electrical measurements. The density of defects is observed to be larger for proton bombarded devices compared to devices irradiated with much larger doses of ⁶⁰Co gammna rays. Initial ESR and electrical measurements were made on-site soon after bombardment in the cyclotron.

Original language	English (US)
Pages	105-109
Number of pages	5
State	Published - 2002
Event	2001 6th European Conference on Radiation and Its Effects on Components and Systems - Grenoble, France Duration: Sep 10 2001 → Sep 14 2001

Other

Other	2001 6th European Conference on Radiation and Its Effects on Components and Systems
Country/Territory	France
City	Grenoble
Period	9/10/01 → 9/14/01

All Science Journal Classification (ASJC) codes

Radiation
Electrical and Electronic Engineering

Cite this

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title = "Defects produced by medium energy proton bombardment of MOS devices",

abstract = "We report results of very sensitive electron spin (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We observe that the measured defect density levels are similar for both the ESR measurements and electrical measurements. The density of defects is observed to be larger for proton bombarded devices compared to devices irradiated with much larger doses of 60Co gammna rays. Initial ESR and electrical measurements were made on-site soon after bombardment in the cyclotron.",

author = "Lenahan, {P. M.} and Mishima, {T. D.} and Jumper, {J. B.} and Fogarty, {Thomas N.} and M. Marrero and L. Cruz and S. Shojah-Ardalan and R. Dwivedi and Richard Wilkins and Trombetta, {L. P.} and C. Singh",

year = "2002",

language = "English (US)",

pages = "105--109",

note = "2001 6th European Conference on Radiation and Its Effects on Components and Systems ; Conference date: 10-09-2001 Through 14-09-2001",

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TY - CONF

T1 - Defects produced by medium energy proton bombardment of MOS devices

AU - Lenahan, P. M.

AU - Mishima, T. D.

AU - Jumper, J. B.

AU - Fogarty, Thomas N.

AU - Marrero, M.

AU - Cruz, L.

AU - Shojah-Ardalan, S.

AU - Dwivedi, R.

AU - Wilkins, Richard

AU - Trombetta, L. P.

AU - Singh, C.

PY - 2002

Y1 - 2002

N2 - We report results of very sensitive electron spin (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We observe that the measured defect density levels are similar for both the ESR measurements and electrical measurements. The density of defects is observed to be larger for proton bombarded devices compared to devices irradiated with much larger doses of 60Co gammna rays. Initial ESR and electrical measurements were made on-site soon after bombardment in the cyclotron.

AB - We report results of very sensitive electron spin (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We observe that the measured defect density levels are similar for both the ESR measurements and electrical measurements. The density of defects is observed to be larger for proton bombarded devices compared to devices irradiated with much larger doses of 60Co gammna rays. Initial ESR and electrical measurements were made on-site soon after bombardment in the cyclotron.

UR - http://www.scopus.com/inward/record.url?scp=0036989364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036989364&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036989364

SP - 105

EP - 109

T2 - 2001 6th European Conference on Radiation and Its Effects on Components and Systems

Y2 - 10 September 2001 through 14 September 2001

ER -

Defects produced by medium energy proton bombardment of MOS devices

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All Science Journal Classification (ASJC) codes

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