@inproceedings{40c63e7c77f94d94afba0746972fad32,
title = "Definitive identification of an important 4H SiC MOSFET interface/near interface trap",
abstract = "We utilize electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) to provide a definitive identification of an interface/near interface defect present in a wide variety of 4H SiC/SiO 2 metal oxide semiconducting field effect transistors (MOSFETs).",
author = "Cochrane, \{C. J.\} and Lenahan, \{P. M.\} and Lelis, \{A. J.\}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.433",
language = "English (US)",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "433--436",
editor = "Devaty, \{Robert P.\} and Michael Dudley and Chow, \{T. Paul\} and Neudeck, \{Philip G.\}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}