Degenerately doped ingabias: Si as a highly conductive and transparent contact material in the infrared range

Y. Zhong, P. B. Dongmo, L. Gong, S. Law, B. Chase, D. Wasserman, J. M.O. Zide

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We demonstrate molecular beam epitaxy (MBE) grown degenerately doped InGaBiAs:Si as a new transparent contact material usable from the near-infrared (near-IR) to the mid-infrared (mid-IR). This material system can exhibit high transparency over large portions ofthe 1.3- 12.5 μm wavelength range, with the exact transparency windows determined by the material carrier concentration. As a comparison, the transmittance of the more conventional IR contact material, Indium Tin Oxide (ITO), drops rapidly for wavelengths longer than1.5 μm. The conductivity of InGaBiAs:Si is also much higher than ITO due to its high doping concentration and good mobility. Our transmission spectra are modeled using a transfermatrix formalism, and the resulting modeled IR transmission spectra closely match our experimental results with proper choice of two fitting parameters, the material plasma frequency and the scattering rate.

Original languageEnglish (US)
Pages (from-to)1197-1204
Number of pages8
JournalOptical Materials Express
Volume3
Issue number8
DOIs
StatePublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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