Skip to main navigation Skip to search Skip to main content

Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

  • D. K. Mohata
  • , R. Bijesh
  • , Y. Zhu
  • , M. K. Hudait
  • , R. Southwick
  • , Z. Chbili
  • , D. Gundlach
  • , J. Suehle
  • , J. M. Fastenau
  • , D. Loubychev
  • , A. K. Liu
  • , T. S. Mayer
  • , V. Narayanan
  • , S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

71   Link opens in a new tab Scopus citations

Fingerprint

Dive into the research topics of 'Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio'. Together they form a unique fingerprint.
Sort by

Keyphrases

Material Science