Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

R. Bijesh; H. Liu; H. Madan; D. Mohata; W. Li; N. V. Nguyen; D. Gundlach; C. A. Richter; J. Maier; K. Wang; T. Clarke; J. M. Fastenau; D. Loubychev; W. K. Liu; V. Narayanan; S. Datta

doi:10.1109/IEDM.2013.6724708

Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V

R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N. V. Nguyen, D. Gundlach, C. A. Richter, J. Maier, K. Wang, T. Clarke, J. M. Fastenau, D. Loubychev, W. K. Liu, V. Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

23 Scopus citations

Abstract

We demonstrate high frequency switching characteristics of TFETs based on the In_0.9Ga_0.1As/GaAs_0.18Sb_0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (I_ON) of 740μA/μm, intrinsic RF transconductance (G_M) of 700μS/μm, and a cut-off frequency (F_T) of 19GHz at V_DS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

Original language	English (US)
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	28.2.1-28.2.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724708
State	Published - 2013
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: Dec 9 2013 → Dec 11 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	12/9/13 → 12/11/13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2013.6724708

Cite this

Bijesh, R., Liu, H., Madan, H., Mohata, D., Li, W., Nguyen, N. V., Gundlach, D., Richter, C. A., Maier, J., Wang, K., Clarke, T., Fastenau, J. M., Loubychev, D., Liu, W. K., Narayanan, V., & Datta, S. (2013). Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 28.2.1-28.2.4). Article 6724708 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724708

@inproceedings{51b8d8ef67194b3a93330f24fe8a48a5,

title = "Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V",

abstract = "We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.",

author = "R. Bijesh and H. Liu and H. Madan and D. Mohata and W. Li and Nguyen, {N. V.} and D. Gundlach and Richter, {C. A.} and J. Maier and K. Wang and T. Clarke and Fastenau, {J. M.} and D. Loubychev and Liu, {W. K.} and V. Narayanan and S. Datta",

year = "2013",

doi = "10.1109/IEDM.2013.6724708",

language = "English (US)",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "28.2.1--28.2.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",

}

Bijesh, R, Liu, H, Madan, H, Mohata, D, Li, W, Nguyen, NV, Gundlach, D, Richter, CA, Maier, J, Wang, K, Clarke, T, Fastenau, JM, Loubychev, D, Liu, WK, Narayanan, V & Datta, S 2013, Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724708, Technical Digest - International Electron Devices Meeting, IEDM, pp. 28.2.1-28.2.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 12/9/13. https://doi.org/10.1109/IEDM.2013.6724708

Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V. / Bijesh, R.; Liu, H.; Madan, H. et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 28.2.1-28.2.4 6724708 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

AU - Bijesh, R.

AU - Liu, H.

AU - Madan, H.

AU - Mohata, D.

AU - Li, W.

AU - Nguyen, N. V.

AU - Gundlach, D.

AU - Richter, C. A.

AU - Maier, J.

AU - Wang, K.

AU - Clarke, T.

AU - Fastenau, J. M.

AU - Loubychev, D.

AU - Liu, W. K.

AU - Narayanan, V.

AU - Datta, S.

PY - 2013

Y1 - 2013

N2 - We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

AB - We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

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U2 - 10.1109/IEDM.2013.6724708

DO - 10.1109/IEDM.2013.6724708

M3 - Conference contribution

AN - SCOPUS:84894338279

SN - 9781479923076

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 28.2.1-28.2.4

BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013

Y2 - 9 December 2013 through 11 December 2013

ER -

Bijesh R, Liu H, Madan H, Mohata D, Li W, Nguyen NV et al. Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V. In 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 28.2.1-28.2.4. 6724708. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2013.6724708