Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N. V. Nguyen, D. Gundlach, C. A. Richter, J. Maier, K. Wang, T. Clarke, J. M. Fastenau, D. Loubychev, W. K. Liu, V. Narayanan, S. Datta

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