Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V

R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N. V. Nguyen, D. Gundlach, C. A. Richter, J. Maier, K. Wang, T. Clarke, J. M. Fastenau, D. Loubychev, W. K. Liu, V. Narayanan, S. Datta

Materials Characterization Lab
Institute for Computational and Data Sciences (ICDS)
Materials Research Institute (MRI)
Computer Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V

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Engineering

Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

Fingerprint

Keyphrases

Engineering

Demonstration of In_0.9Ga_0.1As/GaAs _0.18Sb_0.82 near broken-gap tunnel FET with I _ON=740μA/μm, G_M=70μS/μm and gigahertz switching performance at V_Ds=0.5V