Density of states of Pb1 Si/SiO2 interface trap centers

J. P. Campbell; P. M. Lenahan

doi:10.1063/1.1461053

Density of states of P_b1 Si/SiO₂ interface trap centers

J. P. Campbell, P. M. Lenahan

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Abstract

The electronic properties of the (100) Si/SiO₂ interfacial defect called P_b1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the P_b1 defects have levels in the silicon band gap, (2) that the P_b1 correlation energy is significantly smaller than that of the P_b1 defect, and (3) that the P_b1 levels are skewed toward the lower part of the silicon band gap.

Original language	English (US)
Pages (from-to)	1945-1947
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	11
DOIs	https://doi.org/10.1063/1.1461053
State	Published - Mar 18 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1461053

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title = "Density of states of Pb1 Si/SiO2 interface trap centers",

abstract = "The electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that the Pb1 correlation energy is significantly smaller than that of the Pb1 defect, and (3) that the Pb1 levels are skewed toward the lower part of the silicon band gap.",

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AB - The electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that the Pb1 correlation energy is significantly smaller than that of the Pb1 defect, and (3) that the Pb1 levels are skewed toward the lower part of the silicon band gap.

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Density of states of P_b1 Si/SiO₂ interface trap centers

Abstract

All Science Journal Classification (ASJC) codes

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