Depletion-Mode GaAs SISFET's By Selective Ion Implantation

H. Baratte; Paul M. Solomon; D. C. La Tulipe; Thomas N. Jackson; D. J. Frank; S. L. Wright

doi:10.1109/EDL.1987.26703

Depletion-Mode GaAs SISFET's By Selective Ion Implantation

H. Baratte, Paul M. Solomon, D. C. La Tulipe, Thomas N. Jackson, D. J. Frank, S. L. Wright

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1- μ m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits.

Original language	English (US)
Pages (from-to)	486-488
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1987.26703
State	Published - Oct 1987

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1987.26703

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abstract = "Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1- μ m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits.",

author = "H. Baratte and Solomon, {Paul M.} and {La Tulipe}, {D. C.} and Jackson, {Thomas N.} and Frank, {D. J.} and Wright, {S. L.}",

year = "1987",

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doi = "10.1109/EDL.1987.26703",

language = "English (US)",

volume = "8",

pages = "486--488",

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AU - Baratte, H.

AU - Solomon, Paul M.

AU - La Tulipe, D. C.

AU - Jackson, Thomas N.

AU - Frank, D. J.

AU - Wright, S. L.

PY - 1987/10

Y1 - 1987/10

N2 - Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1- μ m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits.

AB - Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1- μ m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits.

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JF - IEEE Electron Device Letters

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ER -

Depletion-Mode GaAs SISFET's By Selective Ion Implantation

Abstract

All Science Journal Classification (ASJC) codes

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