Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering

K. Zou; X. Hong; D. Keefer; J. Zhu

doi:10.1103/PhysRevLett.105.126601

Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering

K. Zou, X. Hong, D. Keefer, J. Zhu

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156 Scopus citations

Abstract

We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20000cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300A K, surface phonon modes of the HfO2 film centered at 54A meV limit the mobility to approximately 20000cm2/Vs.

Original language	English (US)
Article number	126601
Journal	Physical review letters
Volume	105
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.105.126601
State	Published - Sep 16 2010

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.105.126601

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title = "Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering",

abstract = "We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20000cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300A K, surface phonon modes of the HfO2 film centered at 54A meV limit the mobility to approximately 20000cm2/Vs.",

author = "K. Zou and X. Hong and D. Keefer and J. Zhu",

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AU - Hong, X.

AU - Keefer, D.

AU - Zhu, J.

PY - 2010/9/16

Y1 - 2010/9/16

N2 - We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20000cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300A K, surface phonon modes of the HfO2 film centered at 54A meV limit the mobility to approximately 20000cm2/Vs.

AB - We demonstrate atomic layer deposition of high-quality dielectric HfO2 films on graphene and determine the magnitude of remote oxide surface phonon scattering in dual-oxide structures. The carrier mobility in these HfO2-covered graphene samples reaches 20000cm2/Vs at low temperature. Distinct contributions to the resistivity from surface optical phonons in the SiO2 substrate and the HfO2 overlayer are isolated. At 300A K, surface phonon modes of the HfO2 film centered at 54A meV limit the mobility to approximately 20000cm2/Vs.

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Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering

Abstract

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