Deposition of high quality Sol-Gel oxides on silicon

W. L. Warren, P. M. Lenahan, C. J. Brinker, C. S. Ashley, S. T. Reed

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.

Original languageEnglish (US)
Pages (from-to)425-428
Number of pages4
JournalJournal of Electronic Materials
Issue number5
StatePublished - May 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Deposition of high quality Sol-Gel oxides on silicon'. Together they form a unique fingerprint.

Cite this