Abstract
We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.
Original language | English (US) |
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Pages (from-to) | 425-428 |
Number of pages | 4 |
Journal | Journal of Electronic Materials |
Volume | 19 |
Issue number | 5 |
DOIs | |
State | Published - May 1990 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry