Deposition of high quality Sol-Gel oxides on silicon

We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<10¹¹/cm²eV) and very low densities of slow interface state (<10¹⁰/cm²) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films.